PART |
Description |
Maker |
MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed) GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
TSUS4400 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package GaAs Infrared Emitting Diode in ?3 mm (T-1) Package From old datasheet system
|
VISAY[Vishay Siliconix]
|
TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
LNA2802L |
GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor] Matsshita / Panasonic
|
CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|